Display apparatus
US11315998B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 2020 |
| Grant date | Apr 26, 2022 |
| Priority date | — |
| Expiry date | Jun 19, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A display apparatus that includes a substrate, a first thin-film transistor and a second, thin-film transistor disposed on the substrate at different distances from a top surface of the substrate. A display device is electrically connected to the first thin-film transistor. The first thin-film transistor includes a first semiconductor layer in polycrystalline silicon and a first gate electrode that overlaps a channel region of the first semiconductor layer in a direction of a thickness of the substrate. The second thin-film transistor includes a second semiconductor layer including an oxide semiconductor. The first gate electrode has a stacked structure including a first layer and a second layer. The second layer includes titanium and the first layer includes a different material from the second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.