BCE IGZO TFT device and manufacturing method thereof
US11316050B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 15, 2019 |
| Grant date | Apr 26, 2022 |
| Priority date | — |
| Expiry date | Nov 27, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A BCE IGZO TFT device and a manufacturing method thereof include steps of providing a substrate, depositing a first metal layer on the substrate, wherein the first metal layer forms a gate and a first electrode layer by a patterning process, depositing a gate insulating layer on the substrate, the gate, and the first electrode layer, wherein the gate insulating layer is etched to remove a part of the gate insulating layer on a surface of the first electrode layer, depositing an active layer on the first electrode layer and the gate insulating layer, wherein the active layer and the first electrode layer are in direct contact, and depositing a second metal layer on the active layer, wherein the second metal layer forms a source, a drain, and a second electrode layer by a patterning process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.