Double-sided, high-density network fabrication
US11317505B2 · kind B2 · utility
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18References
20Claims
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Key dates
| Filing date | Feb 18, 2021 |
| Grant date | Apr 26, 2022 |
| Priority date | — |
| Expiry date | Feb 18, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/1572
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A conductive network fabrication process is provided and includes filling a hole formed in a substrate with dielectric material, laminating films of the dielectric material on either side of the substrate, opening a through-hole through the dielectric material at the hole, depositing a conformal coating of dielectric material onto an interior surface of the through-hole and executing seed layer metallization onto the conformal coating in the through-hole to form a seed layer extending continuously along an entire length of the through-hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.