SiC epitaxial wafer containing large pit defects with a surface density of 0.5 defects/CM2 or less, and production method therefor
US11320388B2 · kind B2 · utility
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Key dates
| Filing date | Aug 21, 2017 |
| Grant date | May 3, 2022 |
| Priority date | — |
| Expiry date | Oct 31, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02617
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H—SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 6.0 inclusions/cm2, and wherein a density of large pit defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.5 defects/cm2 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.