Patent · US Active

Non-volatile memory device, storage device and program method thereof

US11322208B2 · kind B2 · utility

2Cited by
12References
20Claims
0Family size

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Key dates

Filing dateNov 16, 2020
Grant dateMay 3, 2022
Priority date
Expiry dateNov 16, 2040

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2029/0411
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A program method of a nonvolatile memory device including receiving a write address and write data, generating a seed corresponding to the write address, generating a random sequence by using the seed, randomizing the write data by using the random sequence, and programming the randomized write data to a memory area corresponding to the write address may be provided. The seed may provide state shaping variable depending on a location of a word line, at which the received write data is to be programmed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.