Multi-function equipment implementing fabrication of high-k dielectric layer
US11322348B2 · kind B2 · utility
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Key dates
| Filing date | Jan 5, 2021 |
| Grant date | May 3, 2022 |
| Priority date | — |
| Expiry date | Jan 5, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/332
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multi-function equipment implements a method of fabricating a thin film. The multi-function equipment according to the invention includes a reaction chamber, a plasma source, a plasma source power generating unit, a bias electrode, an AC (Alternating Current) voltage generating unit, a DC (Direct current) bias generating unit, a metal chuck, a first precursor supply source, a second precursor supply source, a carrier gas supply source, an oxygen supply source, a nitrogen supply source, an inert gas supply source, an automatic pressure controller, and a vacuum pump.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.