Semiconductor device and fabrication method thereof

US11322353B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Jisong JIN · Shanghai, CN
• Zejun He · Shanghai, CN
• Jia NI · Bengbu, CN
• Yanhua Wu · Jinan, CN
• Junling PANG · Shanghai, CN

Key dates

• Filing date: Feb 25, 2020
• Grant date: May 3, 2022
• Expiry date: Aug 16, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76877
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device and a method for forming the semiconductor device are provided. The method includes providing a layer to-be-etched including a first sub-trench region and a second sub-trench region. The method also includes forming a first mask layer over the layer to-be-etched and a second mask layer over the first mask layer, and forming a first sub-trench disposed over the first sub-trench region in the second mask layer. In addition, the method includes forming a first divided trench in the first mask layer and forming a second sub-trench disposed over the second sub-trench region in the second mask layer. Further, the method includes forming a first divided filling layer in the first divided trench, and forming a first middle trench in the first mask layer. The first divided filling layer divides the first middle trench in a second direction.