Contacts for electronic component
US11322363B2 · kind B2 · utility
0Cited by
19References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2020 |
| Grant date | May 3, 2022 |
| Priority date | — |
| Expiry date | Jul 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Atoms are implanted in a semiconductor region at a higher concentration in a peripheral part of the semiconductor region than in a central part of the semiconductor region. A metallic region is then formed to cover the semiconductor region. A heat treatment is the performed to form an intermetallic region from the metallic region and the semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.