Ultrafast laser annealing of thin films
US11322366B1 · kind B1 · utility
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Key dates
| Filing date | Jan 26, 2021 |
| Grant date | May 3, 2022 |
| Priority date | — |
| Expiry date | Jan 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for locally annealing and crystallizing a thin film by directing ultrashort optical pulses from an ultrafast laser into the film. The ultrashort pulses can selectively produce an annealed pattern and/or activate dopants on the surface or within the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.