Backside illuminated image sensor
US11322532B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 7, 2018 |
| Grant date | May 3, 2022 |
| Priority date | — |
| Expiry date | Jun 24, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
The backside illuminated image sensor comprises a substrate of semiconductor material, detector elements arranged at a main surface, a dielectric layer on or above the main surface, a first capacitor layer and a second capacitor layer above the main surface, the capacitor layers forming a capacitor (C1, C2). A peripheral circuit is integrated in the substrate apart from the detector elements, the peripheral circuit being configured for one or more operations of the group consisting of voltage regulation, charge pump operation and stabilization of clock generation, and the capacitor layers are electrically connected with contact regions of the peripheral circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.