Method of processing a power semiconductor device

US11322587B2 · kind B2 · utility

Assignee

• Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

• Hans-Juergen Thees · Dresden, DE
• Stefan Loesch · Lohmen, DE
• Marc Probst · Radeberg, DE
• Tom Richter · Rohrbach, DE
• Olaf Storbeck · Dresden, DE

Key dates

• Filing date: Jun 13, 2020
• Grant date: May 3, 2022
• Expiry date: Jun 13, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/117

Abstract

A power semiconductor device includes a control cell for controlling a load current. The control cell is electrically connected to a load terminal structure on one side and to a drift region on another side. The drift region includes dopants of a first conductivity type. The control cell includes: a mesa extending along a vertical direction and including: a contact region having dopants of the first conductivity type or of a second conductivity type and electrically connected to the load terminal structure, and a channel region coupled to the drift region; a control electrode configured to induce a conduction channel in the channel region; and a contact plug including a doped semiconductive material and arranged in contact with the contact region. An electrical connection between the contact region and load terminal structure is established by the contact plug, a portion of which projects beyond lateral boundaries of the mesa.