Semiconductor device having asymmetrical source/drain

US11322590B2 · kind B2 · utility

Assignee

• SAMSUNG ELECTRONICS CO., LTD. · KR

Inventors

• Jongki Jung · Hwaseong-si, KR
• Myungil Kang · Yongin-si, KR
• Yoonhae Kim · Seojong-myeon, KR
• Kwanheum Lee · Suwon-si, KR

Key dates

• Filing date: May 15, 2020
• Grant date: May 3, 2022
• Expiry date: Jul 14, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/834

Abstract

A semiconductor device includes a substrate, a first active fin on the substrate, the first active fin including a first side surface and a second side surface opposing the first side surface, a second active fin on the substrate, the second active fin including a third side surface facing the second side surface and a fourth side surface opposing the third side surface of the second active fin, a first isolation layer on the first side surface of the first active fin, a second isolation layer between the second side surface of the first active fin and the third side surface of the second active fin, a third isolation layer on the fourth side surface of the second active fin and a merged source/drain on the first and second active fins.