Semiconductor device including a lateral insulator

US11322594B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Fei Ma · Tangxia, CN
• Ya-Ping Chen · Chengdu, CN
• Yunlong Liu · Chengdu, CN
• Hong-Seon Yang · Yongsan-gu, KR
• Shengpin Yang · Sichuan, CN
• Baoqiang Niu · Chengdu, CN
• Rui Liu · Nanhu, CN
• Zhi Peng Feng · Chengdu, CN
• Seetharaman Sridhar · Richardson, US
• Sunglyong Kim · Allen, US

Key dates

• Filing date: Dec 28, 2020
• Grant date: May 3, 2022
• Expiry date: Dec 28, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76224
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device, and methods of forming the same. In one example, the semiconductor device includes a trench in a substrate having a top surface, and a shield within the trench. The semiconductor device also includes a shield liner between a sidewall of the trench and the shield, and a lateral insulator over the shield contacting the shield liner. The semiconductor device also includes a gate dielectric layer on an exposed sidewall of the trench between the lateral insulator and the top surface. The lateral insulator may have a minimum thickness at least two times thicker than a maximum thickness of the gate dielectric layer.