Methods for LDMOS and other MOS transistors with hybrid contact
US11322611B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 12, 2020 |
| Grant date | May 3, 2022 |
| Priority date | — |
| Expiry date | Nov 12, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A lateral DMOS transistor structure includes a substrate of a first dopant polarity, a body region of the first dopant polarity, a source region, a drift region of a second dopant polarity, a drain region, a channel region, a gate structure over the channel region, a hybrid contact implant, of the second dopant polarity, in the source region, and a respective metal contact on or within each of the source region, gate structure, and drain region. The hybrid contact implant and the metal contact together form a hybrid contact defining first, second, and third electrical junctions. The first junction is a Schottky junction formed vertically between the source metal contact and the body. The second junction is an ohmic junction formed laterally between the source metal contact and the hybrid contact implant. The third junction is a rectifying PN junction between the hybrid contact implant and the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.