Oxide-based flexible high voltage thin film transistor
US11322622B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2019 |
| Grant date | May 3, 2022 |
| Priority date | — |
| Expiry date | Mar 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M3/155
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments are directed to a flexible high voltage thin film transistor (f-HVTFT) with a center-symmetric circular configuration. The f-HVTFT includes a ring-shaped oxide semiconductor channel, a ring-shaped gate, a ring-shaped source, and a circular drain. The source and gate each have multiple connections to respective electrode pads, enabling stable and identical electrical characteristics and blocking voltage while the f-HVTFT is subject to bending from random directions. The f-HVTFT enables a high blocking voltage over 100 V, on-current over 100 μA, and low off-current of 0.1 pA, which makes it suitable for power management of self-powered wearable electronic systems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.