Monolithic infrared transceiver
US11322630B2 · kind B2 · utility
1Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2020 |
| Grant date | May 3, 2022 |
| Priority date | — |
| Expiry date | Sep 23, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/173
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optoelectronic device includes a semiconductor substrate and a first stack of epitaxial layers, which are disposed over the semiconductor substrate and are configured to function as a photodetector, which emits a photocurrent in response to infrared radiation in a range of wavelengths greater than 940 nm. A second stack of epitaxial layers is disposed over the first stack and configured to function as an optical transmitter with an emission wavelength in the range of wavelengths greater than 940 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.