Copper-based chalcogenide photovoltaic device and a method of forming the same
US11322634B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2017 |
| Grant date | May 3, 2022 |
| Priority date | — |
| Expiry date | Jun 21, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/543
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a photovoltaic device comprising the steps of: providing a first conductive material on a substrate; depositing a continuous layer of a dielectric material less than 10 nm thick on the first conductive material; annealing the first conductive material and the layer of dielectric material; forming a chalcogenide light-absorbing material on the layer of dielectric material; and depositing a second material on the light-absorbing material such that the second material is electrically coupled to the light-absorbing material; wherein the first conductive material and the dielectric material are selected such that, during the step of annealing, a portion of the first conductive material undergoes a chemical reaction to form: a layer of a metal chalcogenide material at the interface between first conductive material and the dielectric material; and a plurality of openings in the layer of dielectric material; the openings being such to allow electrical coupling between the light-absorbing material and the layer of a metal chalcogenide material. Additionally contemplated is a photovoltaic device formed by this method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.