Patent · US Active

Ge—GaAs heterojunction-based SWIR photodetector

US11322640B2 · kind B2 · utility

0Cited by

1References

5Claims

0Family size

Assignee

TriEye Ltd. · IL

Inventors

Vincent Immer · Petah Tikva, IL
Eran Katzir · Jerusalem, IL
Uriel Levy · Kiryat Ono, IL
Omer Kapach · Jerusalem, IL
Avraham Bakal · Nes Ziona, IL

Key dates

Filing date	Mar 15, 2020
Grant date	May 3, 2022
Priority date	—
Expiry date	Mar 26, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10F77/124

Abstract

Photodetectors comprising a P type Ge region having a first region thickness and a first doping concentration and a N type GaAs region having a second region thickness and a second doping concentration smaller than the first doping concentration by at least one order of magnitude.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.