Patent · US Active

Method for producing an optoelectronic component, and optoelectronic component

US11322655B2 · kind B2 · utility

0Cited by
1References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 5, 2018
Grant dateMay 3, 2022
Priority date
Expiry dateJan 2, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/84

Abstract

Optoelectronic components may include a semiconductor layer sequence on an auxiliary carrier where the sequence includes at least one n-doped layer, at least one p-doped layer, and an active layer therebetween. A first insulation layer is arranged over a surface of the n-doped layer. A first and second metallization are arranged for contacting the p-doped and n-doped layers, and the metallizations are connected to each other. The first and second metallizations are spatially separated from one another. A second insulation layer electrically insulates the first and second metallizations.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.