Method for producing an optoelectronic component, and optoelectronic component
US11322655B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2018 |
| Grant date | May 3, 2022 |
| Priority date | — |
| Expiry date | Jan 2, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
Optoelectronic components may include a semiconductor layer sequence on an auxiliary carrier where the sequence includes at least one n-doped layer, at least one p-doped layer, and an active layer therebetween. A first insulation layer is arranged over a surface of the n-doped layer. A first and second metallization are arranged for contacting the p-doped and n-doped layers, and the metallizations are connected to each other. The first and second metallizations are spatially separated from one another. A second insulation layer electrically insulates the first and second metallizations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.