Flip-chip light emitting device and production method thereof

US11322657B2 · kind B2 · utility

Assignee

• QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO., LTD · CN

Inventors

• Weiping XIONG · Xiamen, CN
• Xin Wang · Chandler, US
• Zhiwei WU · Taiyuan, CN
• Di Gao · Zhejiang, CN
• Chun-I Wu · Taipei, TW
• Duxiang WANG · Xiamen, CN

Key dates

• Filing date: Aug 25, 2020
• Grant date: May 3, 2022
• Expiry date: Sep 15, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/855

Abstract

A flip-chip light emitting device includes a transparent substrate, an epitaxial light-emitting structure, a transparent bonding layer interposed between the transparent substrate and the light-emitting structure, and a protective insulating layer disposed over the light-emitting structure and the bonding layer. The transparent bonding layer has a smaller-thickness section that has a first contact surface for the protective insulating layer to be disposed thereover, and a larger-thickness section that has a second contact surface meshing with and bonded to a roughened bottom surface of the light-emitting structure. The first contact surface is smaller in roughness than the second contact surface. A method for producing the device is also disclosed.