Electronic semiconducting device and method for preparing the electronic semiconducting device

US11322710B2 · kind B2 · utility

Assignee

• Novaled GmbH · DE

Inventors

• Ulrich Heggemann · Dresden, DE
• Markus Hummert · Dresden, DE
• Thomas Rosenow · Dresden, DE
• Mauro Furno · Dresden, DE

Key dates

• Filing date: Feb 20, 2018
• Grant date: May 3, 2022
• Expiry date: Apr 24, 2039

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/549
• WIPO field: Organic fine chemistry
• WIPO sector: Chemistry

Abstract

The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first hole transport layer, wherein the first hole transport layer comprises (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal salts and from electrically neutral metal complexes comprising a metal cation and a at least one anion and/or at least one anionic ligand consisting of at least 4 covalently bound atoms, wherein the metal cation of the electrical p-dopant is selected from alkali metals; alkaline earth metals, Pb, Mn, Fe, Co, Ni, Zn, Cd; rare earth metals in oxidation state (II) or (III); Al, Ga, In; and from Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W in oxidation state (IV) or less; provided that a) p-dopants comprising anion or anionic ligand having generic formula (Ia) or (Ib).