Filter using piezoelectric film bonded to high resistivity silicon substrate with trap-rich layer
US11323089B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 10, 2020 |
| Grant date | May 3, 2022 |
| Priority date | — |
| Expiry date | Oct 22, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/023
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate having a trap-rich region adjacent to a surface and a single-crystal piezoelectric plate having parallel front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The single-crystal piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic mode within the diaphragm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.