Ion-doped two-dimensional nanomaterials
US11325343B2 · kind B2 · utility
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Key dates
| Filing date | Sep 11, 2017 |
| Grant date | May 10, 2022 |
| Priority date | — |
| Expiry date | May 29, 2038 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y40/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Ion-doped two-dimensional nanomaterials are made by inducing electronic carriers (electrons and holes) in a two-dimensional material using a captured ion layer at the surface of the material. The captured ion layer is stabilized using a capping layer. The induction of electronic carriers works in atomically-thin two-dimensional materials, where it induces high carrier density of at least 1014 carriers/cm2. A variety of novel ion-doped nanomaterials and p-n junction-based nanoelectronic devices are made possible by the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.