Polycrystalline silicon manufacturing apparatus
US11326257B2 · kind B2 · utility
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3Claims
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Key dates
| Filing date | Feb 19, 2020 |
| Grant date | May 10, 2022 |
| Priority date | — |
| Expiry date | Mar 19, 2040 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB01J2219/0871
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An integrated sleeve structure is provided between an electrode configured to feed power to a silicon core wire and a bottom plate part. Sealing members are arranged on at least part of a flange part of an insulating member and on at least part of a straight part of the insulating member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.