Patent · US Active

Current-induced dark layer formation for metallization in electronic devices

US11327587B2 · kind B2 · utility

0Cited by
4References
30Claims
0Family size

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Inventors

Key dates

Filing dateJul 1, 2020
Grant dateMay 10, 2022
Priority date—
Expiry dateAug 31, 2040

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06F2203/04103
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In various embodiments, bilayers are formed in electronic devices at least in part by anodization of metal-alloy base layers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.