Magnetic memory, and programming control method, reading method, and magnetic storage device of the magnetic memory

US11328758B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Dan NING · Sichuan, CN
• Zi Jian Zhao · Shanghai, CN
• Tao Wang · Beijing, CN
• Hao Ni · Shanghai, CN

Key dates

• Filing date: Sep 16, 2020
• Grant date: May 10, 2022
• Expiry date: Sep 16, 2040

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C11/1675
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

A magnetic memory and its programming control method and reading method, and a magnetic storage device of the magnetic memory are provided in the present disclosure. The magnetic memory includes a first magnetic tunnel junction memory cell, including a first terminal coupled to a first bit line, and further includes a switch device, including a first terminal coupled to a second terminal of the first magnetic tunnel junction memory cell, and a control terminal connected to a switch control signal. The magnetic memory further includes a second magnetic tunnel junction memory cell, including a first terminal coupled to a second bit line, and a second terminal coupled to a second terminal of the switch device. The magnetic memory further includes a first transistor, a second transistor, and a sensing amplifier.