Semiconductor wafer and method for manufacturing semiconductor wafer thereof
US11328924B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2020 |
| Grant date | May 10, 2022 |
| Priority date | — |
| Expiry date | Jul 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/034
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method for manufacturing a semiconductor wafer and a semiconductor wafer. The method includes: disposing a sacrificial layer on a first surface and a second surface of a patterned substrate, the patterned substrate comprising the first surface and the second surface having different normal directions; exposing the first surface by removing the first portion of the sacrificial layer disposed on the first surface; growing an original nitride buffer layer on the first surface and the second portion of the sacrificial layer; partially lifting off the second portion of the sacrificial layer disposed on the second surface such that at least one sub-portion of the second portion of the sacrificial layer remains on the second surface of the patterned substrate; and growing an epitaxial layer on the original nitride buffer layer, where a crystal surface of the epitaxial layer grows along a normal direction of the patterned substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.