Patent · US Active

Ultralow dielectric mesoporous organosilicon film and preparation method thereof

US11328926B2 · kind B2 · utility

0Cited by

1References

9Claims

0Family size

Assignee

HUAIYIN INSTITUTE OF TECHNOLOGY · CN

Inventors

Lingli Ni · Huai'an County, CN
Yongtao Liu · Hubei, CN
Tao Xie · Copley, US
Minhua Xu · Lo Wu, CN
Zhitian Chen · Huai'an County, CN
Peng Chai · Beijing, CN
Xiaoyan Gao · Weihai, CN
Liang Feng · Huai'an County, CN
Shizhong Zhang · Jilin, CN

Key dates

Filing date	Oct 9, 2018
Grant date	May 10, 2022
Priority date	—
Expiry date	Nov 7, 2038

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC03C2218/32
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present invention relates to the field of chemical industry, and discloses organosilicone micro-mesoporous ultra-low dielectric thin films and preparation methods therefor. A structural formula of a POSS-based organosilane precursor in the thin film is as follows:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.