Method of manufacturing a semiconductor device
US11328931B1 · kind B1 · utility
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20Claims
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Key dates
| Filing date | Feb 12, 2021 |
| Grant date | May 10, 2022 |
| Priority date | — |
| Expiry date | Feb 12, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a method of manufacturing a semiconductor device, a mask pattern is formed over a target layer to be etched, and the target layer is etched by using the mask pattern as an etching mask. The etching is performed by using an electron cyclotron resonance (ECR) plasma etching apparatus, the ECR plasma etching apparatus includes one or more coils, and a plasma condition of the ECR plasma etching is changed during the etching the target layer by changing an input current to the one or more coils.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.