Semiconductor device having a conductive film on an inner wall of a through hole
US11329012B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2019 |
| Grant date | May 10, 2022 |
| Priority date | — |
| Expiry date | Jan 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/33181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A technique for activating a fuse function in a semiconductor device in a relatively short time is provided. The semiconductor device includes a second bonding material provided on the upper surface of the insulating substrate, a third bonding material provided on an upper surface of the semiconductor element, a through hole extending from the first circuit pattern to the second circuit pattern via the core material, a conductive film provided on an inner wall of the through hole, and a heat insulating material provided inside the through hole and surrounded by the conductive film in plan view. The conductive film allows the first circuit pattern and the second circuit pattern to be conductive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.