Protection against electrostatic discharges and filtering
US11329040B2 · kind B2 · utility
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1References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 20, 2019 |
| Grant date | May 10, 2022 |
| Priority date | — |
| Expiry date | Sep 5, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/611
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electronic component includes first and second separate semiconductor regions. A third semiconductor region is arranged under and between the first and second semiconductor regions. The first and third semiconductor regions define electrodes of a first diode. The second and third semiconductor regions define electrodes of a second diode. The first diode is an avalanche diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.