Method for manufacturing laterally diffused metal oxide semiconductor device and semiconductor device
US11329153B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | May 17, 2019 |
| Grant date | May 10, 2022 |
| Priority date | — |
| Expiry date | Jun 9, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a laterally diffused metal oxide semiconductor device and a semiconductor device are provided. A body region is formed before forming a gate dielectric layer and a gate conductor, thereby reducing a channel length of the semiconductor device, thus reducing the on-resistance. In addition, a drift region serves as both a region withstanding a high voltage and a diffusion suppression region for suppressing lateral diffusion of the body region, thereby further reducing the channel length of the semiconductor device, thus manufacturing a short-channel semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.