Three part source/drain region structure for transistor
US11329158B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2020 |
| Grant date | May 10, 2022 |
| Priority date | — |
| Expiry date | Sep 26, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/027
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure for a field-effect transistor includes a semiconductor body, a first gate structure extending over the semiconductor body, and a second gate structure extending over the semiconductor body. A recess is in the semiconductor body between the first and second gate structures. A three part source/drain region includes a pair of spaced semiconductor spacers in the recess; a first semiconductor layer laterally between the pair of semiconductor spacers; and a second semiconductor layer over the first semiconductor layer. The pair of spaced semiconductor spacers, the first semiconductor layer and the second semiconductor layer may all have different dopant concentrations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.