Metal-oxide-semiconductor field-effect transistor with a cold source

US11329164B2 · kind B2 · utility

Assignees

• University of Hong Kong · CN
• THE ROYAL INSTITUTION FOR THEADVANCEMENT OF LEARNING/MCGILL UNIVERSITY · CA

Inventors

• Fei Liu · Wuxi, CN
• Jian Wang · Qingdao, CN
• Hong Guo · Shanghai, CN

Key dates

• Filing date: Jun 6, 2019
• Grant date: May 10, 2022
• Expiry date: Jun 6, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D12/211

Abstract

A metal-oxide-semiconductor field-effect transistor (MOSFET) device is provided. The device comprising: a substrate; an oxide layer on the substrate; a gate on the oxide layer; a source and a drain on the substrate, wherein the source and the drain are doped with a dopant of a first type; and a cold source coupled to the source, wherein the cold source comprises a junction between a semiconductor doped with a dopant of a second type, and a material selected from the group consisting of metal and semimetal.