Avalanche diode along with vertical PN junction and method for manufacturing the same field
US11329185B2 · kind B2 · utility
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4References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 21, 2020 |
| Grant date | May 10, 2022 |
| Priority date | — |
| Expiry date | Dec 21, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An embodiment method of manufacturing an avalanche diode includes forming a first trench in a substrate material, filling the first trench with a first material that comprises a dopant, and causing the dopant to diffuse from the first trench to form part of a PN junction. An avalanche diode array can be formed to include a number of the avalanche diodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.