Patent · US Active

Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

US11329193B2 · kind B2 · utility

0Cited by
1References
13Claims
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Inventors

Key dates

Filing dateOct 19, 2018
Grant dateMay 10, 2022
Priority date
Expiry dateJan 15, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/825

Abstract

An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a semiconductor body including a first region, an active region configured to generate electromagnetic radiation, a starting region, a plurality of funnel-shaped openings and a second region, wherein the starting region is arranged between the first region and the active region, wherein the active region is arranged between the starting region and the second region, wherein the funnel-shaped openings extend from the starting region through the active region as far as the second region, wherein the semiconductor body is based on a nitride compound semiconductor material, wherein the first region comprises n-doping, wherein the second region comprises p-doping, wherein the funnel-shaped openings are filled with a material of the second region, and wherein the funnel-shaped openings have a pre-determinable density, the density of the funnel-shaped openings being decoupled from a density of dislocations inside the first region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.