Optoelectronic semiconductor chip, method of manufacturing an optoelectronic component and optoelectronic component

US11329199B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Britta Göötz · Regensburg, DE
• Matthias Hien · Kirchroth, DE
• Andreas Dobner · Wenzenbach, DE
• Peter Brick · Regensburg, DE
• Matthias Goldbach · Dresden, DE
• Uli Hiller · Bad Abbach, DE
• Sebastian Stigler · Scharmassing, DE

Key dates

• Filing date: Jan 24, 2019
• Grant date: May 10, 2022
• Expiry date: Jul 26, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/855
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

An optoelectronic semiconductor chip, a method for manufacturing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence having an emission side, the emission side comprising a plurality of emission fields, partition walls on the emission side in a region between two adjacent emission fields and a conversion element on one or more emission fields, wherein the conversion element includes a matrix material with first phosphor particles incorporated therein, wherein the first phosphor particles are sedimented in the matrix material such that a mass fraction of the first phosphor particles is greater in a lower region of the conversion element facing the semiconductor layer sequence than in a remaining region of the conversion element, and wherein the partition walls are attached to the emission side without any additional connectors.