OxRAM oxide based resistive random access memory cell and associated manufacturing method
US11329224B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2019 |
| Grant date | May 10, 2022 |
| Priority date | — |
| Expiry date | May 20, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/50
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An OxRAM oxide based resistive random access memory cell includes a first electrode; a layer M1Oss of a sub-stoichiometric oxide of a first metal; a layer M2N of a nitride of a second metal M2; a layer M3M4O of a ternary alloy of a third metal M3, a fourth metal M4 and oxygen O, or M3M4NO of a quaternary alloy of the third metal M3, the fourth metal M4, nitrogen N and oxygen O and a second electrode. The standard free enthalpy of formation of the ternary alloy M3M4O, noted ΔGf,T0 (M3M4O), or of the quaternary alloy M3M4NO, noted ΔGf,T0 (M3M4NO), is strictly less than the standard free enthalpy of formation of the sub-stoichiometric oxide M1Oss of the first metal M1, noted ΔGf,T0 (M1Oss), itself less than or equal to the standard free enthalpy of formation of any ternary oxynitride M2NO of the second metal M2, noted ΔGf,T0 (M2NO): ΔGf,T0(M3M4O)<ΔGf,T0(M1Oss)≤ΔGf,T0(M2NO)or ΔGf,T0(M3M4NO)<ΔGf,T0(M1Oss)≤ΔGf,T0(M2NO).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.