Memory cell comprising a phase-change material
US11329225B2 · kind B2 · utility
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Key dates
| Filing date | Sep 4, 2020 |
| Grant date | May 10, 2022 |
| Priority date | — |
| Expiry date | Nov 19, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/008
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell includes a heating element topped with a phase-change material. Two first silicon oxide regions laterally surround the heating element along a first direction. Two second silicon oxide regions laterally surround the heating element along a second direction orthogonal to the first direction. Top surfaces of the heating element and the two first silicon oxide regions are coplanar such that the heating element and the two first silicon oxide regions have a same thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.