Silicon single crystal growth method and apparatus
US11332848B2 · kind B2 · utility
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Key dates
| Filing date | Jan 18, 2019 |
| Grant date | May 17, 2022 |
| Priority date | — |
| Expiry date | Mar 28, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An embodiment provides a silicon single crystal growth method comprising the steps of: (a) allowing the shoulder of a single crystal to grow vertically; (b) allowing the shoulder to grow horizontally after the vertical growth; and (c) allowing the shoulder to grow in a downward convex shape after the horizontal growth of the shoulder, wherein the shoulder grows at a preset rate on the basis of the final diameter of the shoulder and the shoulder growth height according to steps (b) and (c).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.