Mask blank, phase shift mask, and method of manufacturing semiconductor device
US11333966B2 · kind B2 · utility
1Cited by
2References
27Claims
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Key dates
| Filing date | Nov 20, 2018 |
| Grant date | May 17, 2022 |
| Priority date | — |
| Expiry date | Mar 6, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/20
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a mask blank including a phase shift film. The phase shift film is made of a material containing a non-metallic element and silicon and includes first, second, and third layers; refractive indexes n1, n2, and n3 of the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relations of n1<n2 and n2>n3; and extinction coefficients k1, k2, and k3 of the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relation of k1>k2>k3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.