Thin film transistor, display panel and preparation method thereof, and display apparatus

US11335710B2 · kind B2 · utility

Assignees

• HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. · CN
• BOE Technology Group Co., Ltd. · CN

Inventors

• Qinghe Wang · Beijing, CN
• Tongshang Su · Beijing, CN
• Yongchao Huang · Beijing, CN
• Yingbin Hu · Beijing, CN
• Yang Zhang · San Diego, US
• Haitao Wang · Nanhu, CN
• Ning Liu · Shenyang, CN
• Guangyao Li · Beijing, CN
• Zheng Wang · Beijing, CN
• Yu Ji · Tuji, CN
• Jinliang Hu · Beijing, CN
• Wei Song · Beijing, CN
• Jun Cheng · Beijing, CN
• Liangchen Yan · Beijing, CN

Key dates

• Filing date: Jul 23, 2020
• Grant date: May 17, 2022
• Expiry date: Jul 28, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D99/00

Abstract

A thin film transistor, a display panel and a preparation method thereof and a display apparatus are provided. The thin film transistor includes: a substrate; a gate metal located on a side of the substrate; a gate insulating layer located on a side of the gate metal away from the substrate; an active layer located on a side of the gate insulating layer away from the substrate; a first metal oxide and a second metal oxide which are located on a side of the active layer away from the substrate and are arranged on a same layer; and a source metal and a drain metal which are located on sides of the first metal oxide and the second metal oxide away from the substrate and are arranged in a same layer.