Display panel having portion of encapsulation layer located in hollow region that is direct contact with first inorganic layer, manufacturing method thereof, and display device having the same
US11335760B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2020 |
| Grant date | May 17, 2022 |
| Priority date | — |
| Expiry date | Nov 12, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/124
Abstract
Display panel, manufacturing method thereof, and display device are provided. As an example, the display panel includes a substrate, a TFT layer formed on the substrate, and an encapsulation layer formed on the TFT layer. The TFT layer includes a thin film transistor with a source electrode, a drain electrode and a gate electrode, and further includes a first metal layer, a first inorganic layer on the first metal layer, and a second metal layer on the first inorganic layer. The second metal layer includes a first region and a second region, a hollowed-out region is formed between the first region and the second region, and the first region and the second region are electrically connected via the first metal layer. A portion of the encapsulation layer that is located in the hollowed-out region is in contact with the first inorganic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.