Quantum dot devices with overlapping gates
US11335778B2 · kind B2 · utility
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25Claims
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Key dates
| Filing date | Jun 26, 2018 |
| Grant date | May 17, 2022 |
| Priority date | — |
| Expiry date | Sep 14, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; a first gate above the quantum well stack, wherein the first gate includes a first gate metal and a first gate dielectric; and a second gate above the quantum well stack, wherein the second gate includes a second gate metal and a second gate dielectric, and the first gate is at least partially between a portion of the second gate and the quantum well stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.