Reverse-conducting IGBT and manufacturing method thereof
US11335795B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2019 |
| Grant date | May 17, 2022 |
| Priority date | — |
| Expiry date | Dec 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide a semiconductor device having excellent conduction characteristics of a transistor portion and a diode portion. The semiconductor device having a transistor portion and a diode portion, the semiconductor device includes: a drift region of a first conductivity type provided on a semiconductor substrate, a first well region of a second conductivity type provided on an upper surface side of the semiconductor substrate, an anode region of the second conductivity provided on the upper surface side of the semiconductor substrate, in the diode portion, and a first high concentration region of a second conductivity type which is provided in contact with a first well region between the anode region and the first well region, and has a higher doping concentration than the anode region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.