Photo-emission semiconductor device and method of manufacturing same
US11335830B2 · kind B2 · utility
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Key dates
| Filing date | Aug 17, 2017 |
| Grant date | May 17, 2022 |
| Priority date | — |
| Expiry date | Sep 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A photo-emission semiconductor device superior in reliability is provided. The photo-emission semiconductor device includes a semiconductor layer, a light reflection layer provided on the semiconductor layer, and a protective layer formed by electroless plating to cover the light reflection layer. Therefore, even if the whole structure is reduced in size, the protective layer reliably covers the light reflection layer without gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.