Display device and method of manufacturing the display device
US11335869B2 · kind B2 · utility
1Cited by
1References
19Claims
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Key dates
| Filing date | Jun 19, 2020 |
| Grant date | May 17, 2022 |
| Priority date | — |
| Expiry date | Jul 18, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/351
Abstract
A method of manufacturing a display device includes providing an inorganic layer on a carrier substrate, providing a first flexible substrate on the inorganic layer, providing a first shielding layer including a metal on the first flexible substrate, providing a first barrier layer on the first shielding layer, and providing a thin film transistor layer on the first barrier layer. The inorganic layer includes at least one material selected from silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), and a thickness of the inorganic layer is in a range from about 10 Å to about 6000 Å.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.