Power MOSFET active gate drive based on negative feedback mechanism
US11336277B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 29, 2021 |
| Grant date | May 17, 2022 |
| Priority date | — |
| Expiry date | Apr 29, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
This invention introduces the negative feedback into the gate drive. It proposes a negative feedback active gate drive (NFAGD) for silicon carbide (SiC) and gallium nitride (GaN) semiconductor devices to fully utilize their potential of high switching-speed capability in a phase-leg configuration. An auxiliary P-channel MOSFET is introduced to construct a negative feedback control mechanism. Due to the negative feedback mechanism, the proposed drive can automatically attenuate the disturbance from the complementary device of the phase-leg. The negative feedback active gate drive (NFAGD) has a simple structure and easy to be realized using a push-pull drive circuit, a drive resistor, an auxiliary MOSFET and an auxiliary capacitor, without involving any additional logical circuits. Functionally, the negative feedback active gate drive (NFAGD) can automatically suppress the induced gate-source voltage and make the gate voltage of the MOSFET stable even during high-speed switching operation without sacrificing the switching speed of the MOSFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.