Method for preparing large-area transition metal dichalcogenide single-crystal films by performing vapor deposition on a single-crystal c-plane sapphire substrate with <10-10> surface steps
US11339501B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2020 |
| Grant date | May 24, 2022 |
| Priority date | — |
| Expiry date | Aug 21, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B23/025
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention discloses a method for preparing large-area transition metal dichalcogenide (TMDC) single-crystal films and the products obtained therefrom. The method comprises the steps of: (1) providing a single-crystal C-plane sapphire with surface steps along <1010> directions; and (2) taking the sapphire in step (1) as the substrate, generating unidirectionally arranged TMDC domains on the sapphire surface based on a vapor deposition method and keeping the domains continuously grow and merge into a large-area single-crystal film. The lateral size of the TMDC single-crystal films prepared by the method can reach inch level or above, and is limited only by the size of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.