Photosensitive detector, imaging sensor chip formed using the photosentive detector, and detection method
US11342367B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2018 |
| Grant date | May 24, 2022 |
| Priority date | — |
| Expiry date | Oct 15, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/809
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A photosensitive detector includes an array of detection units, each detection unit having a light-sensing transistor (1), a charge storage transistor (2) and a reading transistor (3), or comprising a light-sensing transistor, a charge transfer transistor (4), a charge storage transistor and a reading transistor. The light-sensing transistor is configured to realize the light-sensing function of the photosensitive detector; the charge storage transistor is configured to store photogenerated charges; the reading transistor is configured to read a signal; and, the charge transfer transistor is configured to control the transfer of the photogenerated charges. The photosensitive detector can realize global shutter and fast reading, and is compatible with the existing floating gate CMOS process, and the failure of any pixel will not affect the normal operation of the whole imaging array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.